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PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 - 500 MHz
Description
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA041501E Package H-36248-2
PTFA041501F Package H-37248-2
Single-carrier CDMA IS-95 Performance
VDD = 28 V, IDQ = 900 mA, = 470 MHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 36 38 40 42 44 46 48 45
Features
* * Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P-1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant
Adjacent Channel Power Ratio (dB)
30 25 20 15
Drain Efficiency (%)
-15C 25C 90C
Efficiency
40 35
*
* * * * *
ACPR ALT
10 5 0
Average Output Power (dBm)
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test--verified by design/characterization in
Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, = 470 MHz
Characteristic
Gain Drain Efficiency Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated
Symbol
Gps
Min
-- -- --
Typ
21 41 -33
Max
-- -- --
Unit
dB % dB
D
ACPR
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11 Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, = 470 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
20.0 45.0 --
Typ
21.0 46.5 -29
Max
-- -- -28
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 900 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2 --
Typ
-- -- 0.07 2.48 --
Max
-- 1.0 -- 3 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 150 W CW)
Symbol
VDSS VGS TJ TSTG RJC
Value
65 -0.5 to +12 200 -40 to +150 0.42
Unit
V V C C C/W
Ordering Information
Type and Version PTFA041501E V4 PTFA041501E V4 R250 PTFA041501F V4 PTFA041501F V4 R250 Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tape & Reel, 250 pcs Tray Tape & Reel, 250 pcs
*See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Circuit Performance
VDD = 28 V, IDQ = 900 mA, POUT = 80 W
50 45 -13
P OUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 900 mA
65 20.9
Efficiency (%), Output Power (dBm)
Gain (dB), Efficiency (%)
40 35 30 25 20 15 460
-15
Input Return Loss (dB)
Efficiency Return Loss
-14
60 55 50 45 40 35 30 25 20 15 460
Efficiency Output Power
20.8 20.7 20.6
-16 -17
20.4 20.3
Gain
-18 -19 -20 470
Gain
20.2 20.1 20
462
464
466
468
462
464
466
468
19.9 470
Frequency (MHz)
Frequency (MHz)
Power Sweep at selected IDQ
VDD = 28 V, = 470 MHz
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 900 mA, = 470 MHz
22.0 21.5 21.0 20.5
22 21
80 70 60
Gain (dB)
Gain (dB)
20.0 19.5 19.0 18.5 18.0 17.5 17.0 39 41 43
IDQ = 1125 mA IDQ = 900 mA IDQ = 675 mA
20 19 18 17 16 15
Gain
50 40 30
Efficiency TCASE = 25C TCASE = 90C
39 41 43 45 47 49 51 53 55
20 10
45
47
49
51
53
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 01.1, 2010-01-20
Drain Efficiency (%)
Gain (dB)
20.5
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 900 mA, 1 = 469 MHz, 2 = 470 MHz
0 50
IM3 vs. Output Power at Selected Biases
VDD = 28 V , 1 = 469 MHz, 2 = 470 MHz
-25 -27
Intermodulation Distortion (dBc)
-10 -20 -30 -40 -50 -60 -70 36 38 40 42
Efficiency IM3
45 40 35 30
Drain Efficiency (%)
-29
IMD (dBc)
-31 -33 -35 -37 -39 -41 -43 36 38
675 mA
900 mA 1125 mA
IM5 IM7
44 46 48 50
25 20 15 10
40
42
44
46
48
50
Output Power (dBm), avg.
Output Power (dBm)
Output Power (at 1 dB compression) vs. Supply Voltage
IDQ = 900 mA, = 470 MHz
55
1.03
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
0.29 A 0.88 A 1.47 A 2.20 A 4.41 A 6.61 A 8.81 A 11.02 A
Normalized Bias Voltage (V)
24 26 28 30 32
Output Power (dBm)
54 53 52 51 50
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80
100
Supply Voltage (V)
Case Temperature (C)
Data Sheet
4 of 11
Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
RD G
Z Source
Z Load
- WAVE LE NGTH
G S
0.0
0.1
D LOAD S TOW AR NGT H
470 MHz 450 MHz
Frequency
MHz 450 455 460 465 470 R
Z Source
jX -3.20 -3.20 -3.10 -3.00 -2.90 0.88 0.84 0.84 0.84 0.83
Z Load
R 1.33 1.35 1.40 1.41 1.44 jX 0.22 0.31 0.38 0.47 0.57
Z Source
470 MHz 450 MHz
0.1
See next page for circuit information
Data Sheet
5 of 11
<---
EL E WAV
Rev. 01.1, 2010-01-20
0.2
0.1
D
S T OW A
Z0 = 50
Z Load
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R6 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R5 3.3K V C4 10F 35V R6 10 V C5 0.1F
L1 VDD R7 5.1K V C6 120pF C10 100pF C11 1F C12 10F 50V C13 0.1F 50V C14 10F 50V
l7 l4
C7 100pF J1 C8 11pF
l6
DUT
C20 5.6pF
C22 11pF
C25 100pF
l1
l2
l3
l5
C9 4.3pF
l10 l8 l9
l11
C21 5.1pF
l12
C23 11pF
l13
C24 8.2pF
l14
J2
L2 C15 100pF C16 1F C17 10F 50V C18 0.1F 50V C19 10F 50V
V66000-G9267-D631-01-7606.dwg
Reference circuit schematic for = 460 MHz
Circuit Assembly Information
DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l 10 l 11 l 12 l 13 l 14 Data Sheet PTFA041501E or PTFA041501F LTN/PTFA041501EF LDMOS Transistor 0.76 mm [.030"] thick, r = 9.2 Rogers TMM10 2 oz. copper
Electrical Characteristics at 460 MHz 1 0.016 0.058 0.097 0.081 0.040 0.158 0.030 0.158 0.030 0.025 0.105 0.006 0.104 0.014 , 50.69 , 24.34 , 4.85 , 50.69 , 4.85 , 37.73 , 10.94 , 37.73 , 10.94 , 5.58 , 5.58 , 5.58 , 21.37 , 50.69
Dimensions L x W (mm) 4.32 x 0.71 14.22 x 2.54 21.59 x 17.78 21.59 x 0.71 8.89 x 17.78 40.64 x 1.27 5.59 x 7.11 40.64 x 1.27 5.59 x 7.11 5.59 x 15.24 23.62 x 15.24 1.27 x 15.24 25.4 x 3.05 3.81 x 0.71 6 of 11
Dimensions L x W (in.) 0.170 0.560 0.850 0.850 0.350 1.600 0.220 1.600 0.220 0.220 0.930 0.050 1.000 0.150 x x x x x x x x x x x x x x 0.028 0.100 0.700 0.280 0.700 0.050 0.280 0.050 0.280 0.600 0.600 0.600 0.120 0.028
Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
GND
R5 C4 C5 C6 R6 R4 C3 R3 C2 R2 R7 R1 Q1 C8 C20 C10 QQ1 C1 C12
VDD
C14
L1
C22
C11
C13
C24 C25
RF IN
C7 C9 C21 C23 C15 C16 L2 C18
RF OUT
041501in_03
041501out_03
C17
C19
V66100-G9267-D631-01-7631.dwg
R5 C4 C5 R6
R4
C3 R3 C2 R2 R7 R1
QQ1 C1
Q1 C8
Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request. Data Sheet 7 of 11 Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component C1, C2, C3 C4 C5, C13, C18 C6 C7, C10, C15, C25 C8, C22, C23 C9 C11, C16 C12, C14, C17, C19 C20 C21 C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Description Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Ceramic capacitor, 120 pF Ceramic capacitor, 100 pF Ceramic capacitor, 11 pF Ceramic capacitor, 4.3 pF Capacitor, 1.0 F Capacitor, 10 F, 50 V Ceramic capacitor, 5.6 pF Ceramic capacitor, 5.1 pF Ceramic capacitor, 8.2 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 3.3k ohms Chip resistor, 10 ohms Chip resistor, 5.1k ohms Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Ferroxcube Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND PCS6106TR-ND P4525-ND 100B 121 100B 101 100B 110 100B 4R3 920C105 TPS106K050R0400 100B 5R6 100B 5R1 100B 8R2 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND
Data Sheet
8 of 11
Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36248-2
(45 X 2.72 [.107])
C L
D
FLANGE 9.78 [.385] LID 9.40 +0.10 19.43 0.51 [.765.020]
4.830.51 [.190.020]
S
C L
-0.15 [.370 +.004 ] -.006
G
2X 12.70 [.500] 27.94 [1.100] 19.810.20 [.780.008] 1.02 [.040]
C L
2X R1.63 [R.064] 4X R1.52 [R.060]
SPH 1.57 [.062] 3.610.38 [.142.015]
0.0381 [.0015]
071117_h- 6248- _po 3 2
-A34.04 [1.340]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]
Data Sheet
9 of 11
Rev. 01.1, 2010-01-20
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37248-2
( 45 X 2.72 [.107]) 4.830.51 [.190.020]
C L
D
LID 9.40 -0.15 [.370+.004] -.006 FLANGE 9.78 [.385]
+0.10
C L
19.430.51 [.765.020]
4X R0.508+0.381 -0.127 [R.020+.015 ] - .005 2X 12.70 [.500]
G
19.810.20 [.780.008] SPH 1.57 [.062]
C L
1.02 [.040]
0.0381 [.0015] -A071117_h- 7248- _po 3 2
S
3.610.38 [.142.015]
20.57 [.810]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 01.1, 2010-01-20
PTFA041501EF V4 Confidential, Limited Internal Distribution Revision History: 2010-01-20 none Previous Version: Page 6, 9, 10 Subjects (major changes since last revision) Minor cosmetic changes only
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2010-01-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 01.1, 2010-01-20

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